| PART |
Description |
Maker |
| 2N6072 2N6072A 2N6072B 2N6074 2N6074A 2N6074B 2N60 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.
|
Motorola
|
| MAC4DLM-D MAC4DLM-1G |
Sensitive Gate Triacs; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC
Sensitive Gate Triacs Silicon Bidirectional Thyristors
|
ON Semiconductor
|
| T2302B T2300 T2301 |
(T2300 - T2302) 2.5-A sensitive-gate silicon triac. Max 10 mA gate
|
GE Solid State
|
| MCR106-6G MCR106-8G MCR106-8 MCR106 MCR106-6 MCR10 |
Sensitive Gate Silicon Controlled Rectifier; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 4 A, 600 V, SCR, TO-225AA
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
ONSEMI[ON Semiconductor]
|
| BT134-600 TR4A60S Z0405MF |
Sensitive Gate Triac
|
Apollo Electron Co., Ltd.
|
| TP4A60S T410-600T |
Sensitive Gate Triac
|
Apollo Electron Co., Ltd.
|
| HTP4A60S |
NON INSULATED TYPE SENSITIVE GATE TRIAC (TO-220 PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| HTF4A60S |
NON INSULATED TYPE SENSITIVE GATE TRIAC (TO-220F PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| T0809XH T0805XH T0805NH |
800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC
SENSITIVE GATE TRIACS
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MAC4DHM-001G |
Sensitive Gate Triacs Silicon Bidirectional Thyristors 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC
|
ON Semiconductor
|
| MAC08MT1G |
Sensitive Gate Triacs Silicon Bidirectional Thyristors 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-261AA
|
ON Semiconductor
|
